Professor

Phone: (027) 87792167-8118

Email: yqwu@hust.edu.cn

Academic Areas: Electrical and Computer Engineering

Research Interests:

Academic Degrees

Ph.D.in Electrical and Computer Engineering,Purdue Univ.,W.Lafayette,IN.Aug.2005-Dec.2009

B.S.E.E.Fudan Univ.,Shanghai,China Sep.2001-Jul.2005

Professional Experience

Extensive experience in nanoscience and technology,semiconductor device and circuit design

Published more than 50 papers on journals and conferences,cited more than 500 times

2012-                 Professor,HuazhongUniv.of Science and Technology,Wuhan,China

2010-2012        Postdoc Research Scientist,and promoted to Research Staff Member

                            IBMT.JWatson Research Center,NY

2005-2009        Research Assistance,Dept.of ECE,Purdue Univ.West Lafayette,IN.US

Selected Publications

Wu,Y.Q.,Farmer,D.B.etal.,“Graphene Electronics: Materials,Devices,and Circuits”,Proceedings of the IEEE (Invited),doi:10.1109/ JPROC.2013.2260311,2013

Yan,H.G.,Low,T.,Zhu.W.,WuY.Q.,etal.,“Damping pathways of mid-infrared plasmon singra phenenano structures”,Nature Photonics,doi:10.1038/nphoton.2013.57,2013

Liu,G.,Wu,Y.Q.,etal.,“Epitaxial Graphene Nanoribbon Array Fabricationusing BCP-Assisted Nanolithography”,ACSNano,Just accepted.DOI:10.1021/nn301515a,2012

Yan,H.,Li,X.,Chandra,B.,Tulevski,G.,Wu,Y.Q,etal.,“Tunable infrared plasmonicde vices using graphene/in sulator stacks”,Nature Nanotech.,7,330–334,2012

Wu,Y.Q.,JenkinsK.A.,etal.,“State-of-the-Art Graphene High-Frequency Electronics”,Nano Lett.,12(6),pp3062–3067,2012

Wu,Y.Q.,*Perebeinos,V.*etal.,“Quantum behavior of graphene transistors near the scaling limit”,Nano Lett.,12(3),pp1417–14232012

Wu,Y.Q.,*Farmer,D.B.*etal.,“Three-Terminal Graphene Negative Differential Resistance Devices”,ACSNano,6(3),pp2610–26162012

Lin,Y.-M.,Valdes-Garcia,A.,Han,S.-J.,Farmer,D.B.,Meric,I.,Sun,Y.,Wu,Y.Q.etal.,“Wafer-scale Graphene Integrated Circuit”,Science332(6035),1294-1297(2011).

Wu,Y.Q.,Lin,Y.-M.etal.,“High-frequency,scaledgraph enetransistors on diamond-like carbon”,Nature 472(7341)74-78 April 72011

XiaFN,Perebeinos V,Lin,Y.-M.,Wu,Y.Q.etal.,“The origins and limits of metal-graph enejunction resistance”,Nature Nanotechnology(3)179-184March2011

Wu,Y.Q.,Farmer,D.B.etal.,“Record HighRF Performance for Epitaxial Graphene Transistors(LateNews),”,2011 International Electron Devices Meeting(IEDM2011),Washington DC,December 5-7,2011

Wu,Y.Q.,Lin,Y.-M.etal.,“RF Performance of Short Channel Graphene Field-Effect Transistor(LateNews),”,2010 International Electron Devices Meeting(IEDM2010),San Francisco,December6-8,2010

Wu,Y.Q.,andYe,P.D.“Scaling of In Ga As MOSFETs in to deep-submicron”,ECS Transactions,vol.28,no.5,pp185-201,April2010

Wu,Y.Q.,Wang,R.S.etal.,“First Experimental Demonstration of 100nm Inversion-mode In GaAs FinFET through Damage-free Sidewall Etching”,2009 International Electron Devices Meeting(IEDM2009):Page331-334,December 7-9,2009

Wu,Y.Q.,Xu,M.etal.,“High-PerformanceDeep-SubmicronInversion Mode In GaAs MOSFETs with Maximum Gm Exceeding1.1mS/µm:New HBr Pretreat mentand Channel Engineering”,2009 International Electron Devices Meeting(IEDM2009):Page323-326,December7-9,2009        

Wu,Y.Q.,Wang,W.K.etal.,“0.8-V Supply Voltage Deep-Submicron Inversion-Mode In0.75 Ga0.25 As MOSFET”,IEEE Electron Device Letters30(7):700-702 July 2009

Wu,Y.Q.,Xu,M.etal.,“Atomic-Layer-Deposited Al2O3/Ga As Metal-Oxide-Semiconductor-Field-Effect Transistor on Sisubstrates using Aspect Ratio Trapping technique”,Applied Physics Letters 93(24),No.242106 December.17,2008

Varghese,D.,Xuan,Y.,Wu,Y.Q.etal.,“Multi-Probe Interface Characterization of In0.65Ga0.35As/Al2O3MOSFET”,2008IEEE International Electron Devices Meeting(IEDM2008),SanFrancisco,CA.,USA

Wu,Y.Q.,Ye,P.D.etal.,“Top-gated graphene field-effect-transistors formed by decomposition of SiC”,Applied Physics Letters 92(9),No.092102 March 3,2008 20.

Xuan,Y.,Wu,Y.Q.,etal.,“High Performance submicron inversion-type enhancement-Mode In GaAs MOSFETs with ALDAl2O3,HfO2 and HfAl Oasgate dielectrics”,2007 International Electron Devices Meeting(IEDM2007),Washington,DCUSA

Wu,Y.Q.,Xuan,Y.etal.,“Inversion-type enhancement-mod eIn PMOSFETs with ALDAl2O3,HfO2 and HfAlO nanolaminaesas high-kgate dielectrics”,Proceeding of 65th Device Research Conference(DRC2007),NotreDame,IN.,USA,2007

Wu,Y.Q.,Xuan,Y.etal.,“Enhancement-mode In Pn-channel metal-oxide-semiconductorfield-effect-transistors with atomic-layer-deposited Al2O3 dielectrics”,Applied Physics Letters91(2),No.022108 July112007

Wu,Y.Q.,Shen,T.etal.,“Photo-assisted capacitance-voltage characterization of high-quality atomic-layer deposited Al2O3/GaNMO Sstructures”Applied Physics Letters90(14),No.143504 April 22007

Wu,Y.Q.,Lin,H.C.etal.,“Current transport and maximum dielectric strength of atomic-layer-deposited ultrath in Al2O3onGaAs”,Applied Physics Letters90(7),No.072105 FEB2007

Wu,Y.Q.,Ye,P.D.etal.,“GaNmetal-oxide-semiconductorfield-effect-transistor with atomic layer deposited Al2O3as gate dielectric”,Materials Science and Engineering B135(3):282-284DEC152006

Awards and Honors

IBM Research Pat Goldberg Memorial Best Paper Award in Computer Science,Electrical Engineering and Math,2013

IBM Ph.D.fellowship award,2009-2010,IBMCorp.

Best Student Oral Presentation Award,International Semiconductor Device Research Symposium 2007

Selected Research Achievements:

Realized world's fastest epitaxial graphene RF transistor and presented at IEDM 2011 as“Late News”

Developed world's first graph eneinte grated circuit and published in Science

Demonstrated world's fastest and smallest CVD graphene RF transistors and published in Nature

Realized world's fastest epitaxial graphene RF transistor and presented at IEDM 2010 as“Late News”

Designed radio-frequency transistors and circuit for low-noise amplifier and mixer.

Configured electrical measurementset-up for radio-frequency measurement up to 50GHz.

Realized the first nanoscale III-V3-dimensional F in FE Tashig hlighted by IEDM 2009.

Developed retrograded oping and haloimplant on In GaAs MOSFETs for the first time.

Developed the first Ga As MOSFET on Sisubstrate and reported by Compound Semiconductors.

Identified by Thomson Reuters Science Watch®on apaperas one of the most cited paper in the past two years in engineering field

 MEDIAREPORTFORRESEARCHACHIEVEMENTS

Chemical & Engineering News:"New Route To Graphene Devices”by Mitch Jacoby,Apr.11,2011

Nature:“Industry-compatible graphene transistors”by Frank Schwierz,Apr.7,2011

IEEE Spectrum:“First Gallium-Based F in FETs”by Anne-Marie Corley,Nov.2009

Semiconductor Today:“First In Ga As Fin FET ssuppresss hort-channel effects”,by Mike Cooke,Dec.2009

Electronic Products:“New fin FET spromises maller,fasterchips”,by Christina D'Airo,Dec.2009

National Science Foundation(NSF)news:“New'F in FETS' Promising for Smaller Transistors,

More Powerful Chips”,Nov.2009

EE Times:“IEDM offers most recent research nuggets”by Nicolas Mokh off,Oct.2009

Selected as one of the eight conference highlights for IEDM 2009.

Compound Semiconductor:“Atomic depositi on promises In Plogic”,Sep.2007

Research work also covered byFox News,the New York Times,the Washington Post,Sciencedaily.com,physorg.com,ascribe.org,inscience.organd many other news outlets.

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