Phone: (027)87792331

Email: xfli@mail.hust.edu.cn

Academic Areas: Two-dimensional materials and devices.

Research Interests:

Xuefei Li was born in Hubei,China.He received the B.E.degree in materials chemistry from Harbin Engineering University in 2008 and PhD degree from Nanjing University in 2013.He joined the Huazhong University of Science and Technology as a lecturer in 2014.From November 2011 to April 2013,he was a visiting scholar in Purdue University.He is currently engaged in research of the science and technology of atomic-layer-deposited high-kon Ge,III-V semiconductor,and 2D crystal.

Academic Degrees

PhD in Materials Physics and Chemistry,2013,Nanjing University;

B.E in Materials Chemistry,1982,Harbin Engineering University.

Professional Experience

At Huazhong University of Science and Technology since 2014.

School of Electrical & Electronic Engineering,Lecturer (2014-present)

At Purdue University,USA,(2011-2013),School of Electrical and Computer Engineering,Visiting Scholar.

Selected Publications

Xuefei Li,lingming Yang,Mengwei Si,SichaoLi,Mingqiang Huang,Peide Ye,Yanqing Wu,Performance potential and limit of MoS2 transistors,Adv.Mater..27,1547(2015).

Xuefei Li,Xiaojie Liu,Yanqiang Cao,Aidong Li*,HuiLi,DiWu,Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation,Appl.Surf.Sci.,264,783(2013).

Xuefei Li,Yanqiang Cao,Aidong Li*,HuiLi and DiWu,HfO2/Al2O3/Gegate stacks with small capacitance equivalent thickness and low interface state density,ECS Solid State Lett.,1,N10(2012).

Xuefei Li,Xiaojie Liu,Yingying Fu,AidongLi*,Wenqi Zhang,HuiLi,and DiWu,Effect of an nealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Gesubstrates,J.Vac.Sci.Technol.B,30,010602(2012).

Xuefei Li,Xiaojie Liu,Wenqi Zhang,Yingying Fu,Aidong.Li*,HuiLi,and Di.Wu,Comparison of the interfacial and electrical properties of HfAlO films on Ge with Sand GeO2 passivation,Appl.Phys.Lett.,98,162903(2011).

Xuefei Li,AidongLi*,Xiaojie Liu,Xiaochun Chen,HuiLi,DiWu Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Gesubstrates,Appl.Surf.Sci.,257,4589(2011).

Xuefei Li,Yingying Fu,Xiaojie Liu,Aidong Li*,HuiLi,DiWu,Band alignment and interfacial properties of atomic layer deposited(TiO2)x(Al2O3)1−x gate dielectrics on Ge,Appl.Phys.A,105,763(2011).

Xuefei Li,Xiaojie Liu,Yingying Fu,Aidong Li*,HuiLi,DiWu,Effects of post annealing temperature on the band alignments and interfacial properties of atomic layer deposited Al2O3 on Gesubstrates,Integrated Ferroelectrics,134,16(2012).

Yanqiang Cao,Xuefei Li,Aidong Li*,HuiLi,DiWu,The combination self-cleaning effect of trim ethyl aluminium and tetrakis(dimethyl-amino)hafnium pretreatments on GaAs,Appl.Surf.Sci.,263,497(2012).

Jizhou Kong,Youpin Gong,Xuefei Li,AidongLi*,Junlong Zhang,Qingyu Yan and DiWu,Magnetic properties of Fe Pt nanoparticle assemblies embedded in atomic-layer-deposited Al2O3,J.Mater.Chem.,21,5046(2011).

LinDong,Xinrang Wang,Jingyun Zhang,Xuefei Li,RoyGordon,and Peide Ye*,Ga As enhancement-Moden MOSFET senabled by atomic layer epitaxial La1.8Y0.2O3 as dielectric,IEEE Electron Device Lett.,34,487(2013).

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